PDRA on UltrAlGaN

A postdoctoral research associate in the Cambridge Centre for Gallium Nitride, part of the Department of Materials Science and Metallurgy and lead of the nitride activity in the EPSRC National Epitaxy Facility, grows nitride materials and devices for power electronics by metal-organic vapour phase epitaxy (MOVPE) and characterises them. The post belongs to the EPSRC UltrAlGaN Programme Grant with the University of Bristol and other partners, which aims to develop high-performance AlGaN solid-state circuit breakers.

Research covers growth of aluminium- and nitrogen-polar AlGaN, graded AlGaN layers, AlGaN regrowth, growth on bulk AlN substrates and doping of AlGaN, particularly polarisation doping, in collaboration with the project's molecular beam epitaxy capability, with possible basic device fabrication to support epitaxy characterisation. Responsibilities include managing research activities, contributing to the direction of the Centre's nitride research, presenting at international conferences, drafting manuscripts with Professor Oliver and helping supervise Master's and PhD students.

Funding is for 24 months in the first instance.

A PhD in materials science, physics, electrical engineering or a related area, or nearing completion; extensive crystal-growth experience, preferably MOVPE; a research track record on nitride or closely related semiconductors; and experience with two or more characterisation techniques such as scanning probe microscopy, X-ray diffraction, SEM, cathodoluminescence, photoluminescence, TEM, Hall or C-V measurements (scanning probe expertise particularly welcome). Device fabrication experience is desirable. Applications include a CV and a research statement.